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Forsíða

Forsíða

Einar Örn Sveinbjörnsson - Professor

Einar Örn Sveinbjörnsson

–

School of Engineering and Natural Sciences

Einar Örn Sveinbjörnsson

Professor

Location
VR-3 / V03-102
Phone
525 - 5153
Email
einars [at] hi.is

Unit
Faculty of Physical Sciences
Website
http://uni.hi.is/einars

Published works

2024

Detection of Very Fast Interface Traps at 4H-SiC/AlN and 4H-SiC/Al2O3 Interfaces

2023

The role of boron related defects in limiting charge carrier lifetime in 4H-SiC epitaxial layersAPL Materials
Passivation of Very Fast Near-Interface Traps at the 4H-SiC/SiO₂ Interface Using Sodium Enhanced Oxidation
Improvement of channel-carrier mobility in 4H-SiC MOSFETs correlated with passivation of very fast interface traps using sodium enhanced oxidationAIP Advances
Observations of very fast electron traps at SiC/high-κ dielectric interfacesAPL Materials

2022

Detection of near-interface traps in NO annealed 4H-SiC metal oxide semiconductor capacitors combining different electrical characterization methodsJournal of Applied Physics
Observation of Fast Near-Interface Traps in 4H-SiC MOS Capacitors Using Capacitance Voltage Analysis at Cryogenic Temperatures
Mg-doping and free-hole properties of hot-wall MOCVD GaNJournal of Applied Physics

2021

A method for characterizing near-interface traps in SiC metal-oxide-semiconductor capacitors from conductance-temperature spectroscopy measurementsJournal of Applied Physics

2020

Near-Interface Trap Model for the Low Temperature Conductance Signal in SiC MOS Capacitors with Nitrided Gate OxidesIEEE Transactions on Electron Devices

2019

Enhanced Mobility in InAlN/AlN/GaN HEMTs Using a GaN InterlayerIEEE Transactions on Electron Devices
CVD growth and properties of on-axis vanadium doped semi-insulating 4H-SiC epilayersJournal of Applied Physics
Electrical characterization of high k-dielectrics for 4H-SiC MIS devicesMaterials Science in Semiconductor Processing
Electrical properties of 4H-SiC MIS capacitors with AlN gate dielectric grown by MOCVDSolid-State Electronics
Electrical characterization of MOCVD grown single crystalline ALN thin films on 4H-SiC

2018

Electrical characterization of amorphous Al2O3 dielectric films on n-type 4H-SiCAIP Advances
Electron Trapping in Extended Defects in Microwave AlGaN/GaN HEMTs with Carbon-Doped BuffersIEEE Transactions on Electron Devices

2017

Conductance signal from near-interface traps in n-type 4H-SiC MOS capacitors under strong accumulation
Low density of near-interface traps at the Al₂O₃/4H-SiC interface with Al₂O₃ made by low temperature oxidation of Al

2016

Oxidation-Induced Deep Levels in n - And p -Type 4H - And 6H -SiC and Their Influence on Carrier LifetimePhysical Review Applied
Donor and double-donor transitions of the carbon vacancy related EH_6/7 deep level in 4H-SiCJournal of Applied Physics
Characterization and physical modeling of MOS capacitors in epitaxial graphene monolayers and bilayers on 6H-SiCAIP Advances

2015

Hysteresis modeling in graphene field effect transistorsJournal of Applied Physics

2014

Oxidation induced ON₁, ON_2a/b defects in 4h-sic characterized by DLTS
Deep traps in 4H-SiC MOS capacitors investigated by deep level transient spectroscopy
Carrier mobility as a function of temperature in as-grown and H-intercalated epitaxial graphenes on 4H-SiC
Carrier lifetime controlling defects Z_1/2 and RB1 in standard and chlorinated chemistry grown 4H-SiCCrystal Growth and Design

2013

Sodium enhanced oxidation

2012

Strong reduction in the density of interface states at the SiO ₂/4H-SiC interface after oxidation in the presence of alkali ionsPhysica Scripta
Comparison of post-growth carrier lifetime improvement methods for 4H-SiC epilayers
Passivation and depassivation of interface traps at the SiO ₂/4H-SiC interface by potassium ions

2011

Reduction in the density of interface states at the SiO₂/4H-SiC interface after dry oxidation in the presence of potassium

2010

The 23rd nordic semiconductor meetingPhysica Scripta T
Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator- semiconductor-heterostructure capacitorsJournal of Applied Physics

2009

A study of deep energy-level traps at the 4H-SiC/SiO₂ interface and their passivation by hydrogen
Effect of high temperature oxidation of 4H-SiC on the near-interface traps measured by TDRCMaterials Science Forum
Influence of passivation oxide properties on SiC Field-plated buried gate MESFETs
Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systemsMicroelectronics Reliability
1200 V 4H-SiC BJTs with a common emitter current gain of 60 and low on-resistance
Scattering mechanisms in silicon carbide MOSFETs with gate oxides fabricated using sodium enhanced oxidation technique
Trap and inversion layer mobility characterization using Hall effect in silicon carbide-based MOSFETs with gate oxides grown by sodium enhanced oxidationIEEE Transactions on Electron Devices

2008

Surface passivation oxide effects on the current gain of 4H-SiC bipolar junction transistorsApplied Physics Letters
Influence of field plates and surface traps on microwave silicon carbide MESFETsIEEE Transactions on Electron Devices

2007

Formation of deep traps at the 4H-SiC/SiO₂ interface when utilizing sodium enhanced oxidation
A comparative study of surface passivation on SiC BJTs with high current gain
Sodium enhanced oxidation of Si-face 4H-SiC
High frequency 4H-SiC MOSFETs
Comparison between oxidation processes used to obtain the high inversion channel mobility in 4H-SiC MOSFETsSemiconductor Science and Technology
A strong reduction in the density of near-interface traps at the SiO ₂/4H-SiC interface by sodium enhanced oxidationJournal of Applied Physics
1200-V 5.2-mΩ · cm² 4H-SiC BJTs with a high common-emitter current gainIEEE Electron Device Letters
Formation of deep traps at the 4H-SiC/SiO₂ interface when utilizing sodium enhanced oxidation
Design and fabrication of 4H-SiC RF MOSFETsIEEE Transactions on Electron Devices

2006

High power-density 4H-SiC RF MOSFETsMaterials Science Forum
Fabrication and characterization of field-plated buried-gate SiC MESFETsIEEE Electron Device Letters
High power-density 4H-SiC RF MOSFETs
High channel mobility 4H-SiC MOSFETsMaterials Science Forum
High-power-density 4H-SiC RF MOSFETsIEEE Electron Device Letters

2005

High field-effect mobility in 6H-SiC MOSFET with gate oxides grown in alumina environment
High field effect mobility in Si Face 4H-SiC MOSFET made on sublimation grown epitaxial material
Field effect mobility in n-channel Si face 4H-SiC MOSFET with gate oxide grown on aluminium ion-implanted material
High field effect mobility in 6H-SiC MOSFETs with gate oxides grown in alumina environmentMaterials Science Forum
Interfaces between 4H-SIC and SiO ₂Journal of Applied Physics
Interface trap properties of thermally oxidized n-type 4H-SiC and 6H-SiCSolid-State Electronics
High field-effect mobility in n-channel Si Face 4H-SiC MOSFETs with gate oxide grown on aluminum ion-implanted materialIEEE Electron Device Letters
Stable operation of high mobility 4H-SiC MOSFETs at elevated temperaturesElectronics Letters

2004

A comparison between SiO₂/4H-SiC interface traps on (0001) and (1120) facesMaterials Science Forum
Analysis of the electron traps at the 4H-SiC/SiO₂ interface using combined CV/thermally stimulated current measurementsMicroelectronic Engineering
High field effect mobility in Si face 4H-SiC MOSFET transistorsElectronics Letters
Enhancement of inversion channel mobility in 4H-SiC MOSFETs using a gate oxide grown in nitrous oxide (N₂O)Materials Science Forum
High field effect electron mobility in Si face 4H-SiC MOSFETElectronics Letters

2003

Thermal emission of electrons from selected s-shell configurations in InAs/GaAs quantum dotsApplied Physics Letters
A Study of the Shallow Electron Traps at the 4H-SiC/SiO₂ Interface
Positron annhilation studies of defects at the SiO2/SiC interfaceMaterials Science Forum
Positron Annihilation Studies of Defects at the SiO₂/SiC Interface
Observation of interface defects in thermally oxidized SiC using positron annihilationApplied Physics Letters

2002

Cryogenic performance of ultrathin oxide MOS capacitors with in situ doped p⁺ poly-Si_1-xGe_x and poly-Si gate materialsSemiconductor Science and Technology
Thermally grown and deposited dielectrics on SiC
Comment on Reliable extraction of the energy distribution of Si/SiO ₂ interface traps in ultrathin metal-oxide-semiconductor structures [Appl. Phys. Lett. 80, 3952 (2002)]Applied Physics Letters
On shallow interface states in n type 4H-SiC metal-oxide-semiconductor structures
New evidence of interfacial oxide traps in n-type 4H- and 6H-SiC MOS structures
Low temperature electrical performance of ultrathin oxide MOS capacitors with p⁺ poly-Si_1-xGe_x and poly-Si gate materialsProceedings of SPIE - The International Society for Optical Engineering

2001

Configurally metastable defect in irradiated epitaxially grown boron doped p-type SiPhysical Review B
Configurationally metastable defects in irradiated epitaxially grown boron-doped p-type SiPhysical Review B - Condensed Matter and Materials Physics
Shallow dopant and surface levels in 6H-SiC MOS structures studied by thermally stimulated current techniqueMaterials Science Forum
Border traps in 6H-SiC metal-oxide-semiconductor capacitors investigated by the thermally-stimulated current techniqueApplied Physics Letters

2000

Characterization of SiC MOS structures using conductance spectroscopy and capacitance voltage analysisMaterials Science Forum
High-energy He-ion irradiation-induced defects and their influence on the noise behavior of Pd/n-Si_1-xGe_x Schottky junctionsApplied Physics Letters
High-energy He-ion irradiation induced defects and its influence on the noise behavior of Pd/n-Si1-xGex Schottky junctionsApplied Physics Letters

1999

Hydrogen-atom number in platinum-hydrogen complexes in siliconPhysical Review B - Condensed Matter and Materials Physics
Simple method for the evaluation of the recombination parameters in SiC MOS structuresMicroelectronic Engineering
Similarities in the electrical properties of transition metal-hydrogen complexes in siliconMaterials Science and Engineering B: Solid-State Materials for Advanced Technology

1998

High frequency capacitance measurements on metal-insulator-semiconductor structures in thermal non-equilibrium conditionSolid-State Electronics
On the interpretation of high-frequency capacitance data of SiC MOS structuresMaterials Science Forum
Hydrogen passivation of Be-acceptors in AlGaAs/GaAs quantum well structuresMaterials Research Society Symposium - Proceedings

1997

Room-temperature electroluminescence from dislocations in siliconThin Solid Films
New interpretation of the dominant recombination center in platinum doped siliconApplied Physics Letters
Electrical properties of platinum-hydrogen complexes in siliconPhysical Review B - Condensed Matter and Materials Physics
High frequency capacitance measurements on metal-insulator-semiconductor structures in thermal non-equilibrium conditionMaterials Research Society Symposium - Proceedings
Room temperature electroluminescence from D1 dislocations centers in silicon.Defects in Electronic Materials II
New interpretation of the midgap level in platinum doped siliconApplied Physics Letters

1996

Photoluminescence studies of lithium-gold-related defect complexes in siliconMaterials Science Forum
Hydrogen passivation of gold centers in siliconMaterials Science and Engineering B
Proceedings of the 1995 E-MRS Spring Meeting
Room temperature electroluminescence from dislocation-rich siliconApplied Physics Letters
Platinum-Hydrogen complex responsible for the midgap level in Pt-doped siliconProceedings of the 23d International Conference on the Physics of Semiconductors

1995

Lithium-gold-related defect complexes in n-type crystalline siliconJournal of Applied Physics
Hydrogen and lithium passivation of gold in siliconMaterials Research Society Symposium - Proceedings
Reversible transformations of hydrogen-gold complexes in siliconProceedings of the 22nd International Conference on the Physics of Semiconductors
Reaction kinetics of hydrogen-gold complexes in siliconPhysical Review B
Lithium-gold-related photoluminescence in n-type siliconMaterials Science Forum

1994

Hydrogen-gold-related deep levels in crystalline siliconMaterials Science Forum
Hydrogen passivation of gold in p-type silicon involving hydrogen-gold-related deep levelsPhysical Review B
Lithium-gold-related defect complexes in n-type siliconPhysica Scripta
Phosphorus diffusion gettering of gold in siliconMaterials Science Forum

1993

Phosphorus diffusion gettering of gold in siliconJournal of Applied Physics

1992

Transformation of gold in n-type silicon from a deep level to the gold acceptor levelDefect Engineering in Semiconductor Growth, Processing and Device Technology
Novel hydrogen-gold-related deep acceptor in n-type siliconApplied Physics Letters

1990

The role of native defects in the optical properties of Li-diffused GaAsProceedings of the 14th Nordic Semiconductor Meeting
DLTS technique for the characterization of recombination centers in high resistivity semiconductorsProceedings of the 14th Nordic Semiconductor Meeting
Photoluminescence study of GaAs diffused with LiImpurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures

Keywords for Specialisation:

Physics of semiconductor devices

Wide bandgap semiconductor technologies

Defects in semiconductor devices

Electrical properties of graphene